وفر -33% FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

السعر الأصلي هو: 30.00 EGP.السعر الحالي هو: 20.00 EGP.

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

SKU T_FQPF2n60 SKU SYS X8882 التوفر متوفر
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الوسوم
2N60 FQP2N60 FQPF2N60 MOSFET MOSFET Transistors N-Channel MOSFET Power MOSFET Transistor

الوصف

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

The FQPF2N60 N-Channel Enhancement Mode Power MOSFET is a high-voltage switching transistor designed for applications that require up to 600V drain-source capability with a continuous drain current of 1.6A. It is well-suited for high-voltage control and switching stages where stable operation, compact design, and predictable switching behavior are important.

With a relatively low gate charge (Qg), the FQPF2N60 can be driven efficiently in many switching circuits, helping reduce driver requirements and supporting faster transitions. Its TO-220F insulated package also provides safer mounting and improved isolation from the heatsink, which is useful in compact power designs and consumer electronics assemblies.

Key Features

  • High voltage rating: up to 600V (VDS)
  • Continuous drain current: up to 1.6A (ID)
  • Low total gate charge: around 9 nC
  • Fast switching capability (typical rise time in tens of nanoseconds)
  • Insulated TO-220F package for easier and safer heatsink mounting
  • Suitable for high-voltage switching and control circuits

Absolute Maximum Ratings

ParameterValue
Drain-Source Voltage (VDS)600 V
Gate-Source Voltage (VGS)30 V
Drain Current (ID)1.6 A
Max Power Dissipation (PD)28 W
Max Junction Temperature (TJ)150 °C

Electrical Characteristics

ParameterValue
Gate Threshold Voltage (VGS(th))up to 5 V
Total Gate Charge (Qg)9 nC
Rise Time (tr)25 ns
Output Capacitance (Coss)40 pF
RDS(on)up to 4.7 Ω

Package

  • TO-220F (insulated full-pack)

Typical Applications

  • High-voltage switching stages
  • SMPS auxiliary power sections
  • Inverter / converter control circuits
  • LED drivers and small HV power supplies
  • Industrial and consumer high-voltage switching

التقييمات

  1. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”new”,”to”:”draft”,”by”:”Admin1″},”time”:”2026-02-17 18:54:16″}

  2. Mazin (#9820) –

    {“action”:”view”,”payload”:{“screen”:”edit_product”,”user”:”Mazin”},”time”:”2026-02-25 12:40:14″}

  3. Mazin (#9820) –

    {“action”:”status_change”,”payload”:{“from”:”draft”,”to”:”pending”,”by”:”Mazin”},”time”:”2026-02-25 12:43:05″}

  4. Mazin (#9820) –

    {“action”:”edit_diff”,”payload”:{“by”:”Mazin”,”diff”:{“core:title”:{“old”:”New Product – T_FQPF2n60″,”new”:”FQPF2N60 N-Channel Enhancement Mode Power MOSFET”},”core:content”:{“old”:””,”new”:”

    \r\n

     FQPF2N60 N-Channel Enhancement Mode Power MOSFET<\/h2>\r\n

    \r\n\r\nType Designator: FQPF2N60<\/span>  📄📄 <\/span>\r\n\r\nType of Transistor: MOSFET\r\n\r\nType of Control Channel: N-Channel\r\n

    Absolute Maximum Ratings<\/h3>\r\nPd ⓘ<\/abbr> – Maximum Power Dissipation: 28 W\r\n\r\n|Vds|ⓘ<\/abbr> – Maximum Drain-Source Voltage: 600 V\r\n\r\n|Vgs|ⓘ<\/abbr> – Maximum Gate-Source Voltage: 30 V\r\n\r\n|Id| ⓘ<\/abbr> – Maximum Drain Current: 1.6 A\r\n\r\nTj ⓘ<\/abbr> – Maximum Junction Temperature: 150 °C\r\n

    Electrical Characteristics<\/h3>\r\n|VGSth|ⓘ<\/abbr> – Maximum Gate-Threshold Voltage: 5 V\r\n\r\nQg ⓘ<\/abbr> – Total Gate Charge: 9 nC\r\n\r\ntr ⓘ<\/abbr> – Rise Time: 25 nS\r\n\r\nCossⓘ<\/abbr> – Output Capacitance: 40 pF\r\n\r\nRDSonⓘ<\/abbr> – Maximum Drain-Source On-State Resistance: 4.7 Ohm<\/a>\r\n\r\nPackage: TO-220F<\/a>\r\n\r\n<\/div>\r\n

  5. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”pending”,”to”:”publish”,”by”:”Admin1″},”time”:”2026-02-27 18:15:35″}

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