Save -33% FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

Original price was: 30.00 EGP.Current price is: 20.00 EGP.

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

SKU T_FQPF2n60 SKU SYS X8882 Availability In stock
Quantities are confirmed after reviewing your order. Orders are normally prepared and shipped within 3–5 business days. Online availability does not necessarily mean the product is currently available at the branch.
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2N60 FQP2N60 FQPF2N60 MOSFET MOSFET Transistors N-Channel MOSFET Power MOSFET Transistor

Description

FQPF2N60 N-Channel Power MOSFET Transistor 600V 1.6A (TO-220F)

The FQPF2N60 N-Channel Enhancement Mode Power MOSFET is a high-voltage switching transistor designed for applications that require up to 600V drain-source capability with a continuous drain current of 1.6A. It is well-suited for high-voltage control and switching stages where stable operation, compact design, and predictable switching behavior are important.

With a relatively low gate charge (Qg), the FQPF2N60 can be driven efficiently in many switching circuits, helping reduce driver requirements and supporting faster transitions. Its TO-220F insulated package also provides safer mounting and improved isolation from the heatsink, which is useful in compact power designs and consumer electronics assemblies.

Key Features

  • High voltage rating: up to 600V (VDS)
  • Continuous drain current: up to 1.6A (ID)
  • Low total gate charge: around 9 nC
  • Fast switching capability (typical rise time in tens of nanoseconds)
  • Insulated TO-220F package for easier and safer heatsink mounting
  • Suitable for high-voltage switching and control circuits

Absolute Maximum Ratings

ParameterValue
Drain-Source Voltage (VDS)600 V
Gate-Source Voltage (VGS)30 V
Drain Current (ID)1.6 A
Max Power Dissipation (PD)28 W
Max Junction Temperature (TJ)150 °C

Electrical Characteristics

ParameterValue
Gate Threshold Voltage (VGS(th))up to 5 V
Total Gate Charge (Qg)9 nC
Rise Time (tr)25 ns
Output Capacitance (Coss)40 pF
RDS(on)up to 4.7 Ω

Package

  • TO-220F (insulated full-pack)

Typical Applications

  • High-voltage switching stages
  • SMPS auxiliary power sections
  • Inverter / converter control circuits
  • LED drivers and small HV power supplies
  • Industrial and consumer high-voltage switching

Reviews

  1. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”new”,”to”:”draft”,”by”:”Admin1″},”time”:”2026-02-17 18:54:16″}

  2. Mazin (#9820) –

    {“action”:”view”,”payload”:{“screen”:”edit_product”,”user”:”Mazin”},”time”:”2026-02-25 12:40:14″}

  3. Mazin (#9820) –

    {“action”:”status_change”,”payload”:{“from”:”draft”,”to”:”pending”,”by”:”Mazin”},”time”:”2026-02-25 12:43:05″}

  4. Mazin (#9820) –

    {“action”:”edit_diff”,”payload”:{“by”:”Mazin”,”diff”:{“core:title”:{“old”:”New Product – T_FQPF2n60″,”new”:”FQPF2N60 N-Channel Enhancement Mode Power MOSFET”},”core:content”:{“old”:””,”new”:”

    \r\n

     FQPF2N60 N-Channel Enhancement Mode Power MOSFET<\/h2>\r\n

    \r\n\r\nType Designator: FQPF2N60<\/span>  📄📄 <\/span>\r\n\r\nType of Transistor: MOSFET\r\n\r\nType of Control Channel: N-Channel\r\n

    Absolute Maximum Ratings<\/h3>\r\nPd ⓘ<\/abbr> – Maximum Power Dissipation: 28 W\r\n\r\n|Vds|ⓘ<\/abbr> – Maximum Drain-Source Voltage: 600 V\r\n\r\n|Vgs|ⓘ<\/abbr> – Maximum Gate-Source Voltage: 30 V\r\n\r\n|Id| ⓘ<\/abbr> – Maximum Drain Current: 1.6 A\r\n\r\nTj ⓘ<\/abbr> – Maximum Junction Temperature: 150 °C\r\n

    Electrical Characteristics<\/h3>\r\n|VGSth|ⓘ<\/abbr> – Maximum Gate-Threshold Voltage: 5 V\r\n\r\nQg ⓘ<\/abbr> – Total Gate Charge: 9 nC\r\n\r\ntr ⓘ<\/abbr> – Rise Time: 25 nS\r\n\r\nCossⓘ<\/abbr> – Output Capacitance: 40 pF\r\n\r\nRDSonⓘ<\/abbr> – Maximum Drain-Source On-State Resistance: 4.7 Ohm<\/a>\r\n\r\nPackage: TO-220F<\/a>\r\n\r\n<\/div>\r\n

  5. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”pending”,”to”:”publish”,”by”:”Admin1″},”time”:”2026-02-27 18:15:35″}

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