
IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω
IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω
- Package/Case: TO-220
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 100 V
- Id – Continuous Drain Current: 14 A
- Rds On – Drain-Source Resistance: 0.2 Ohms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
- Description
Description
IRF9530 P-Channel Power MOSFET Transistor IC (TO-220) 100V 14A 0.2Ω
IRF9530 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:-
• Dynamic dV/dt rating
• 100% avalanche rated
• Fast switching
• Ease of paralleling
• New high voltage benchmark
• P-Channel
• Compliant to RoHS directive 2002/95/EC
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Drain-Source Breakdown Voltage (Vds) | -100V |
| Continuous Drain Current (Id) | -14A |
| Drain-Source Resistance (Rds On) | 0.20Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 58 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 79W |
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* Product Images are shown for illustrative purposes only and may differ from actual product.
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