Save -42% IRF830 N-Channel Power MOSFET Transistor 4.5A 500V 1.5Ω TO-220

IRF830 N-Channel Power MOSFET Transistor 4.5A 500V 1.5Ω TO-220

Original price was: 33.00 EGP.Current price is: 19.00 EGP.

IRF830 N-Channel Power MOSFET Transistor 4.5A 500V 1.5Ω TO-220

SKU T_IRF830 SKU SYS x3055 Availability In stock
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IRF830 MOSFET MOSFET Transistors N-Channel Power MOSFET Transistor Transistor Transistors ترانزيستور موسفت

Description

IRF830 N-Channel Power MOSFET Transistor 4.5A 500V 1.5Ω TO-220

The IRF830 is a fast switching high voltage N-Channel MOSFET with a low on-state resistance. The Mosfet has a maximum drain to source voltage of 500V. The mosfet will have a drain to source internal resistance of 1.5Ω when triggered with 10V gate voltage.

 

Pin Configuration

Pin NumberPin NameDescription
1SourceCurrent flows out through Source (maximum 4.5A)
2GateControls the biasing of the MOSFET (Threshold voltage 10V)
3DrainCurrent flows in through Drain

 

Features

  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 4.5A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 1.5 Ohms
  • Rise time and fall time is 16nS and 16nS
  • Available in To-220 package

Note: Complete technical details can be found at the IRF830 datasheet linked at the bottom of the page

 

Alternatives for IRF830 

8N50, FTK480, KF12N50

 

Other N-channel MOSFETS 

IRF840, IRF740, BSS138, IRF520, 2N7002, BS170, BSS123, IRF3205, IRF1010E

 

About IRF830 MOSFET

The IRF840 is an N-Channel Power MOSFET which can switch loads upto 500V with a drain current of 4.5A. If you need a relatively high current Mosfet you can check the IRF840. Both Mosfet has a gate threshold voltage of 10V across the Gate and Source pin with a on-state resistance of 1.5Ω. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.

One considerable disadvantage of the IRF830 Mosfet is its high on-resistance (RDS) value which is about 1.5 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.

 

Applications 

  • Switching high power devices
  • Inverter Circuits
  • DC-DC Converters
  • Control speed of motors
  • LED dimmers or flashers
  • High Speed switching applications

 

2D model of the component 

If you are designing a PCB or Perf board with this component then the following picture from the IRF830 Datasheet will be useful to know its package type and dimensions.

IRF830 MOSFET Dimensions

Component DatasheetIRF830 MOSFET Datasheet 

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