Save -33% 7N70C (SIF7N70C) 700V 7A N-Channel Power MOSFET – High-Voltage Switching

7N70C (SIF7N70C) 700V 7A N-Channel Power MOSFET – High-Voltage Switching

Original price was: 30.00 EGP.Current price is: 20.00 EGP.

7N70C (SIF7N70C) is a 700V 7A N-Channel power MOSFET with Qg 24 nC and RDS(on) up to 1.35Ω, available in TO-220 / TO-220FP / TO-262 / TO-263 packages for high-voltage switching applications.

7N70C (SIF7N70C) هو 700V 7A N-Channel power MOSFET بقيمة Qg 24 nC وRDS(on) حتى 1.35Ω، ويتوفر بتغليفات TO-220 وTO-220FP وTO-262 وTO-263 لتطبيقات التبديل بجهد عالي.

 

SKU T_FQPF7n70c SKU SYS X8885 Availability In stock
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700V 700V MOSFET 7A 7A MOSFET 7N70C anfrtr Circuits Power Converter ghd High High Voltage MOSFET Industrial Electronics Inverter mhwlat MOSFET mzwdat Power N-Channel N-Channel MOSFET Power MOSFET Power Switching Qg Qg 24nC RDS(on) RDS(on) 1.35 Ohm SIF7N70C SMPS tbdyl Power TO-220 TO-220FP TO-262 TO-263 ttbyqat snaaya

Description

7N70C (SIF7N70C) 700V 7A N-Channel Power MOSFET – High-Voltage Switching

The 7N70C (type designator: SIF7N70C) is a high-voltage N-Channel power MOSFET designed for efficient switching in circuits operating up to 700V. With a continuous drain current capability of 7A, it is suitable for high-voltage power stages in SMPS, converters, and industrial switching applications where reliability and thermal performance are essential.

This MOSFET is built to handle demanding switching conditions while offering practical efficiency characteristics. Its RDS(on) helps manage conduction losses, and its moderate total gate charge (Qg) supports controlled switching behavior in high-voltage designs.

It is commonly available in multiple package options including TO-220, TO-220FP, TO-262, and TO-263, giving flexibility for through-hole or surface-mount power layouts depending on the design requirements.

Key Features

  • High voltage rating: 700V (VDS)
  • Continuous drain current: 7A (ID)
  • RDS(on): up to 1.35Ω (max)
  • Total gate charge (Qg): 24 nC
  • Designed for high-voltage switching and power conversion
  • Multiple package options for flexible mounting

Absolute Maximum Ratings

ParameterValue
Drain-Source Voltage (VDS)700 V
Gate-Source Voltage (VGS)±30 V
Drain Current (ID)7 A
Max Power Dissipation (PD)147 W
Max Junction Temperature (TJ)150°C

Electrical Characteristics

ParameterValue
Total Gate Charge (Qg)24 nC
RDS(on)up to 1.35 Ω

Package Options

  • TO-220 / TO-220FP / TO-262 / TO-263

Typical Applications

  • High-voltage SMPS
  • Power converters and switching stages
  • Inverters and industrial power electronics
  • HV switching and control circuits

7N70C (SIF7N70C) 700V 7A N-Channel Power MOSFET للتبديل بجهد عالي

القطعة 7N70C (type designator: SIF7N70C) هي N-Channel power MOSFET مخصصة لدوائر التبديل والتحويل التي تعمل حتى 700V. تدعم تيار تشغيل مستمر حتى 7A، لذلك فهي مناسبة لمراحل القدرة في مزودات الطاقة، دوائر التحويل، وتطبيقات التبديل الصناعية التي تحتاج اعتمادية وتحمل حراري جيد.

تساعد قيمة RDS(on) على تقليل فاقد التوصيل داخل الدائرة، كما أن Qg المتوسطة تساهم في أداء تبديل منضبط في تصميمات الجهد العالي. وتتوفر هذه القطعة بعدة تغليفات مثل TO-220 و TO-220FP و TO-262 و TO-263 لتناسب طرق تركيب مختلفة حسب التصميم.

أهم المميزات

  • جهد تشغيل حتى 700V (VDS)
  • تيار تشغيل حتى 7A (ID)
  • RDS(on) حتى 1.35Ω (حد أقصى)
  • Qg حوالي 24 nC
  • مناسبة لدوائر التبديل والتحويل بجهد عالي
  • تغليفات متعددة لمرونة التركيب

الحدود القصوى

البندالقيمة
VDS700 V
VGS±30 V
ID7 A
PD147 W
TJ150°C

الخصائص الكهربائية

البندالقيمة
Qg24 nC
RDS(on)حتى 1.35 Ω

التغليفات المتاحة

  • TO-220 / TO-220FP / TO-262 / TO-263

الاستخدامات الشائعة

  • مزودات طاقة بجهد عالي SMPS
  • دوائر التحويل والتبديل
  • تطبيقات صناعية للقدرة
  • دوائر تحكم وتبديل بجهد عالي

 

Reviews

  1. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”new”,”to”:”draft”,”by”:”Admin1″},”time”:”2026-02-17 18:54:17″}

  2. Mazin (#9820) –

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  3. Mazin (#9820) –

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  4. Mazin (#9820) –

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    \r\n

    FQPF 7N70C 700V 7A N-Channel Power MOSFET<\/h2>\r\n

    \r\n\r\nType Designator: SIF7N70C<\/span>  📄📄 <\/span>\r\n\r\nType of Transistor: MOSFET\r\n\r\nType of Control Channel: N-Channel\r\n

    Absolute Maximum Ratings<\/h3>\r\nPd ⓘ<\/abbr> – Maximum Power Dissipation: 147 W\r\n\r\n|Vds|ⓘ<\/abbr> – Maximum Drain-Source Voltage: 700 V\r\n\r\n|Vgs|ⓘ<\/abbr> – Maximum Gate-Source Voltage: 30 V\r\n\r\n|Id| ⓘ<\/abbr> – Maximum Drain Current: 7 A\r\n\r\nTj ⓘ<\/abbr> – Maximum Junction Temperature: 150 °C\r\n

    Electrical Characteristics<\/h3>\r\nQg ⓘ<\/abbr> – Total Gate Charge: 24 nC\r\n\r\nRDSonⓘ<\/abbr> – Maximum Drain-Source On-State Resistance: 1.35 Ohm<\/a>\r\n\r\nPackage: TO-220<\/a> TO-220FP<\/a> TO-262<\/a> TO-263<\/a>\r\n\r\n<\/div>\r\n<\/div>\r\n

    7N70C datasheet<\/h2>\r\n

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  5. Admin1 (#289) –

    {“action”:”status_change”,”payload”:{“from”:”pending”,”to”:”publish”,”by”:”Admin1″},”time”:”2026-02-27 18:38:59″}

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