Save -29% IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω

IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω

Original price was: 35.00 EGP.Current price is: 25.00 EGP.

IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω

  1. Package/Case: TO-220
  2. Transistor Polarity: P-Channel
  3. Number of Channels: 1 Channel
  4. Vds – Drain-Source Breakdown Voltage: 55V
  5. Id – Continuous Drain Current: 31 A
  6. Rds On – Drain-Source Resistance: 0.6 Ohms
  7. Vgs – Gate-Source Voltage: – 20 V, + 20 V
SKU T_IRF5305 P-Ch 31A SKU SYS X6821 Availability In stock
Quantities are confirmed after reviewing your order. Orders are normally prepared and shipped within 3–5 business days. Online availability does not necessarily mean the product is currently available at the branch.
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Circuit Components IRF5305 MOSFET MOSFET Transistors P-Channel P-Channel MOSFET Power MOSFET Transistor TO-220 Transistor Transistors

Description

IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω

IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features:-

• Advanced process technology

• Dynamic dv/dt rating

• Fast switching

• Fully avalanche rated

Detailed Specifications:-

Number of Channels1 Channel
Transistor PolarityP-Channel
Drain-Source Breakdown Voltage (Vds)-55V
Continuous Drain Current (Id)-31A
Drain-Source Resistance (Rds On)60mOhms
Gate-Source Voltage (Vgs)20V
Gate Charge (Qg)63 nC
Operating Temperature Range-55 – 175°C
Power Dissipation (Pd)110W

Related Documents

pdf IRF5305 MOSFET Datasheet 

* Product Images are shown for illustrative purposes only and may differ from actual product.

 

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