Save -25% Out of stock 20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247)

20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247)

Name: Buy 20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247) Online in Egypt – 45.00 EGP | Micro Ohm Electronics
SKU: T_FQA20n60
Price: 45.00 EGP
Availability: InStock

SKU T_FQA20n60 SKU SYS X8802 Availability In stock

Quantities are confirmed after reviewing your order. Orders are normally prepared and shipped within 3–5 business days. Online availability does not necessarily mean the product is currently available at the branch. تأكيد الكميات بيتم بعد مراجعة الأوردر، وتجهيز وشحن الطلب بيستغرق عادة من 3 إلى 5 أيام عمل. توافر المنتج على الموقع لا يعني بالضرورة توافره داخل الفرع، لذلك اعمل الأوردر مسبقًا لتأكيد الكمية وتجهيزه.

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Description

20N60 N-Channel MOSFET Transistor 600V 20A (TO-3P / TO-247)

The 20N60 N-Channel MOSFET is a high-voltage power transistor built for switching applications up to 600V with a continuous drain current of 20A. It is commonly used in circuits that require fast switching, high efficiency, and strong performance under thermal stress—such as power converters, motor drive stages, and switching power supplies.

Thanks to its low RDS(on) and solid avalanche ruggedness, the 20N60 helps reduce conduction losses and improves overall power stage efficiency. Its design supports stable operation in demanding conditions, making it a dependable option for both industrial and consumer high-voltage switching circuits.

Key Features

High voltage rating: up to 600V (VDS)
Continuous drain current: up to 20A (ID)
Low on-resistance: RDS(on) up to 0.32Ω
Fast switching performance
High power dissipation capability for better thermal handling
Rugged avalanche capability for improved reliability

Absolute Maximum Ratings

Parameter	Value
Drain-Source Voltage (VDS)	600 V
Gate-Source Voltage (VGS)	30 V
Drain Current (ID)	20 A
Max Power Dissipation (PD)	416 W
Max Junction Temperature (TJ)	150 °C

Electrical Characteristics

Parameter	Value
Gate Threshold Voltage (VGS(th))	up to 4 V
Total Gate Charge (Qg)	170 nC
Rise Time (tr)	130 ns
Output Capacitance (Coss)	330 pF
RDS(on)	up to 0.32 Ω

Package Options

Available in common power packages such as TO-3P / TO-247 / TO-230 (depending on the manufacturer and batch).

Typical Applications

Switching Power Supplies (SMPS)
Power Converters & High-Voltage Switching
Motor Drives
Inverters and Industrial Power Stages

Replacement / Substitution Notes

For replacement, choose a MOSFET with:

VDS ≥ 600V
ID ≥ 20A
Similar or lower RDS(on)
Comparable Qg and switching speed
Same or compatible package/pinout (TO-247 / TO-3P)

Reviews

Admin1 (#289) – February 6, 2026
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Mazin (#9820) – February 25, 2026
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Mazin (#9820) – February 25, 2026
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Mazin (#9820) – February 25, 2026
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20N60 Datasheet. Specs and Replacement<\/h2>\r\nThe 20N60 is an N-channel MOSFET designed for high-voltage applications up to 600V and continuous drain current of 20A. It features low on-resistance and fast switching, making it ideal for power converters, motor drives, and switching power supplies. Its rugged design ensures reliable operation under thermal stress. The device offers high efficiency, reduced power loss, and robust avalanche capability, making it a key component in industrial and consumer electronics requiring efficient high-voltage switching.\r\n
\r\n\r\nType Designator: 20N60<\/span> 📄📄 <\/span>\r\n\r\nType of Transistor: MOSFET\r\n\r\nType of Control Channel: N-Channel\r\n
Absolute Maximum Ratings<\/h3>\r\nPd ⓘ<\/abbr> – Maximum Power Dissipation: 416 W\r\n\r\n|Vds|ⓘ<\/abbr> – Maximum Drain-Source Voltage: 600 V\r\n\r\n|Vgs|ⓘ<\/abbr> – Maximum Gate-Source Voltage: 30 V\r\n\r\n|Id| ⓘ<\/abbr> – Maximum Drain Current: 20 A\r\n\r\nTj ⓘ<\/abbr> – Maximum Junction Temperature: 150 °C\r\n
Electrical Characteristics<\/h3>\r\n|VGSth|ⓘ<\/abbr> – Maximum Gate-Threshold Voltage: 4 V\r\n\r\nQg ⓘ<\/abbr> – Total Gate Charge: 170 nC\r\n\r\ntr ⓘ<\/abbr> – Rise Time: 130 nS\r\n\r\nCossⓘ<\/abbr> – Output Capacitance: 330 pF\r\n\r\nRDSonⓘ<\/abbr> – Maximum Drain-Source On-State Resistance: 0.32 Ohm<\/a>\r\n\r\nPackage: TO-3P<\/a> TO-247<\/a> TO-230<\/a>\r\n\r\n<\/div>\r\n
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\r\n\r\n 20N60 substitution<\/a>\r\n\r\n<\/div>\r\n<\/div>\r\n<\/div>\r\n
20N60 datasheet\r\n 20n60.pdf<\/a> $\"pdf_icon\"$ <\/h2>\r\n
\r\n\r\n \r\n\r\n $\"20N60\"$ <\/a>\r\n\r\n<\/div>\r\n<\/div>\r\n<\/div>\r\n<\/div>\r\n
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Mazin (#9820) – February 25, 2026
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Admin1 (#289) – February 27, 2026
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