IRFP250N ترانزستور MOSFET على شكل قناة N
نوع المسمى: IRFP250N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 214 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 30 A
Total Gate Charge (Qg): 123 nC
Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm
الحزمة: TO247AC
