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2N5401 PNP Transistor
1.50 EGP
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- Description
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Description
Characteristics of the 2N5401 bipolar transistor
- Type -?PNP
- Collector-Emitter Voltage:?-150?V
- Collector-Base Voltage:?-160?V
- Emitter-Base Voltage:?-5?V
- Collector Current:?-0.6?A
- Collector Dissipation -?0.625?W
- DC Current Gain (hfe) -?60?to?240
- Transition Frequency -?100?MHz
- Operating and Storage Junction Temperature Range?-55 to 150??C
- Package -?TO-92
Characteristics of the 2N5401 bipolar transistor
- Type -?PNP
- Collector-Emitter Voltage:?-150?V
- Collector-Base Voltage:?-160?V
- Emitter-Base Voltage:?-5?V
- Collector Current:?-0.6?A
- Collector Dissipation -?0.625?W
- DC Current Gain (hfe) -?60?to?240
- Transition Frequency -?100?MHz
- Operating and Storage Junction Temperature Range?-55 to 150??C
- Package -?TO-92
Pin configuration (Pinout) of the 2N5401
The 2N5401 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.?2N5401C?(suffix “C”) transistor with center collector.
Here is an image showing the pin diagram of the this transistor.
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