G30N60UFD High-Performance IGBT Transistor N-Channel
Original price was: 80.00 EGP.60.00 EGPCurrent price is: 60.00 EGP.
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G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247
Original price was: 75.00 EGP.65.00 EGPCurrent price is: 65.00 EGP.
G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247
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Description
G20N60 C3 N- Channel IGBT transistor (40A, 600V) TO-247
G20N60 is a high voltage switching MOS gated device that combines the finest qualities of MOSFETs and bipolar transistors. The component combines a bipolar transistor’s low on-state conduction loss with a MOSFET’s high input impedance to provide the desired effect. Between 25 and 150 degrees Celsius, the significantly lower on-state voltage loss hardly varies slightly. The IGBT is utilized in anti-parallel with the RHRP3060 diode. Many high voltage switching applications running at moderate frequencies and requiring minimal conduction losses are excellent candidates for the IGBT.
Features
- Highly reliable
- 40A, 600V at TC= 25oC
- Short Circuit Rated
- Low Conduction Loss
- It has high capability to reduce power losses
Specification
| Model | G20N60 |
| Type | N-Channel IGBT |
| Peak Repetitive Reverse Voltage | 600V |
| Package | TO-247 |
| Brand name | Fairchild |
| Typical fall time | 140nS |
| Maximum Power Dissipation | 165W |
| Operating and Storage Temperature Range | -65 to 175 centigrade |
| Country of Origin | China |
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