MOSFET Transistors
FQP50N06 LOGIC N-Channel Power MOSFET Transistor
Original price was: 30.00 EGP.20.00 EGPCurrent price is: 20.00 EGP.
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IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω
Original price was: 35.00 EGP.25.00 EGPCurrent price is: 25.00 EGP.
IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω
- Package/Case: TO-220
- Transistor Polarity: P-Channel
- Number of Channels: 1 Channel
- Vds – Drain-Source Breakdown Voltage: 55V
- Id – Continuous Drain Current: 31 A
- Rds On – Drain-Source Resistance: 0.6 Ohms
- Vgs – Gate-Source Voltage: – 20 V, + 20 V
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- Description
Description
IRF5305 P-Channel Power MOSFET Transistor IC (TO-220) 55V 31A 0.6Ω
IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Features:-
• Advanced process technology
• Dynamic dv/dt rating
• Fast switching
• Fully avalanche rated
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | P-Channel |
| Drain-Source Breakdown Voltage (Vds) | -55V |
| Continuous Drain Current (Id) | -31A |
| Drain-Source Resistance (Rds On) | 60mOhms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 – 175°C |
| Power Dissipation (Pd) | 110W |
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